3D-graphene-laser patterned p-type silicon Schottky diode

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dc.authoridBAYRAM, Ozkan/0000-0002-0741-3129
dc.authoridbilge ocak, sema/0000-0002-0590-7555
dc.authoridOrhan, Elif/0000-0002-3949-6141
dc.authoridBerberoglu, Halil/0000-0002-2435-3631
dc.contributor.authorOrhan, Elif Oz
dc.contributor.authorEfil, Esra
dc.contributor.authorBayram, Ozkan
dc.contributor.authorKaymak, Nuriye
dc.contributor.authorBerberoglu, Halil
dc.contributor.authorCandemir, Ozun
dc.contributor.authorPavlov, Ihor
dc.date.accessioned2024-10-04T18:48:06Z
dc.date.available2024-10-04T18:48:06Z
dc.date.issued2021
dc.departmentBayburt Üniversitesien_US
dc.description.abstractThe influence of the laser patterning (LP) process on the quality of graphene (Gr) film and Schottky diode characteristics was researched in this study. First of all, p-type silicon (Si) was patterned by homemade femto-second laser source. To compare the resulting effect, non-patterned n-Si and p-Si were used as substrates. To achieve vertically oriented three-dimensional (3D) Gr nanosheets (VGNs) onto the laser patterned p-type Si, non patterned n-Si, and p-Si substrates, we used Radio-Frequency Plasma Enhanced Chemical Vapor Deposition (RFPECVD) technique. Then, Raman analyses for VGNs obtained on patterned and non-patterned p-Si and n-Si substrates were conducted. All results indicate that the Gr obtained on all substrates is vertically oriented. Scanning electron microscopy (SEM) analyses were also performed to obtain information about the morphological properties of the 3D Gr structure. In addition, the influence of the laser patterning at the Gr-Si interface was evaluated by comparing two sets of devices which are junctions of Gr-Laser Patterned Si (Gr-LPSi) and GrInsulator-Silicon (Gr-I-Si) at 300 K in the dark medium. D1 device consists of a Gr-LPSi junction that involves RFPECVD grown Gr on the silicon, whose surface exposed the laser beam for patterning. D2 device consists of a GrI-Si junction that involves RF-PECVD grown Gr onto the silicon, whose surface involves a thin native oxide layer (similar to 2 nm). The results show that the laser treatment causes an increment in Schottky barrier height (SBH) and decreases leakage currents under a reverse bias voltage of the diode. Notably, we have seen the influence of the laser patterning process on 3D Gr nano-sheets which is that the entire surface of the substrate has now reformed new structures in the nano-sphere and nano-rose morphology, so we believe that this is the first work that shows these structures in this form.en_US
dc.description.sponsorshipGazi University Scientific Research Council [18/2015-03, 65/2019-01]; Scientific and Technologycal Research Council of Turkey (TUBITAK) [118F375]en_US
dc.description.sponsorshipThe authors gratefully acknowledge the Gazi University Scientific Research Council for the funding via the projects: 18/2015-03 and 65/2019-01. The authors would like to thank the Gazi University Photonics Application and Research Center. The authors also acknowledge the Scientific and Technologycal Research Council of Turkey (TUBITAK) project no. 118F375.en_US
dc.identifier.doi10.1016/j.mssp.2020.105454
dc.identifier.issn1369-8001
dc.identifier.issn1873-4081
dc.identifier.scopus2-s2.0-85091804512en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.urihttps://doi.org/10.1016/j.mssp.2020.105454
dc.identifier.urihttp://hdl.handle.net/20.500.12403/2889
dc.identifier.volume121en_US
dc.identifier.wosWOS:000585285800004en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevier Sci Ltden_US
dc.relation.ispartofMaterials Science in Semiconductor Processingen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectGrapheneen_US
dc.subjectNano-sheeten_US
dc.subjectLaser patterningen_US
dc.subjectSchottky diodeen_US
dc.title3D-graphene-laser patterned p-type silicon Schottky diodeen_US
dc.typeArticleen_US

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