Current voltage analyses of Graphene-based structure onto Al2O3/p-Si using various methods

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dc.authoridOrhan, Elif/0000-0002-3949-6141
dc.authoridbilge ocak, sema/0000-0002-0590-7555
dc.authoridBAYRAM, Ozkan/0000-0002-0741-3129
dc.contributor.authorEfil, Esra
dc.contributor.authorKaymak, Nuriye
dc.contributor.authorSeven, Elanur
dc.contributor.authorOrhan, Elif Oz
dc.contributor.authorBayram, Ozkan
dc.contributor.authorOcak, Sema Bilge
dc.contributor.authorTataroglu, Adem
dc.date.accessioned2024-10-04T18:49:25Z
dc.date.available2024-10-04T18:49:25Z
dc.date.issued2020
dc.departmentBayburt Üniversitesien_US
dc.description.abstractThe present study's main purpose is to determine the current-voltage (I-V) performance of Graphene (Gr) based hetero nanostructure produced on Al2O3/p-Si. Graphene synthesis was carried out using the chemical vapor deposition (CVD) technique on Copper (Cu) foils used as a metal catalyst and transferred onto Al2O3/p-Si using the conventional transfer method. The I-V characteristics of this structure were measured in the dark environment, and the electrical properties of the Gr/Si structure were characterized at room temperature. The rectifying ratio (RR) of the structure was found to be about 103 at +/- 3 V. The electrical properties of ideality factor (n), series resistance (R-S), and barrier height (Phi(b)) were examined by using the theory of Thermionic Emission (TE), Norde's method, and Cheung's method. The values of Phi(b), which were calculated using Norde's method, Cheung's method, and the theory of thermionic emission (TE), were found to be 0.69 eV, 0.71 eV, and 0.68 eV, respectively. The ideality factor was found to be approximately 3.89 according to the theory of TE. The values of series resistance were also determined using the Norde's method and Cheung's two different parameters (dV/dln (I) and H(I)) found to be 9.60 k Omega, 9.12 k Omega, and 5.94 k Omega, respectively.en_US
dc.description.sponsorshipScientific Research Council (BAP) of Gazi University [18/2015-03, 65/2019-01]en_US
dc.description.sponsorshipThe authors would like to thank the Scientific Research Council (BAP) of Gazi University for the financial support given to this research under Project No:18/2015-03 and Project No:65/2019-01. Also, the authors would like to express their gratitude to the Photonics Application and Research Center of Gazi University.en_US
dc.identifier.doi10.1016/j.vacuum.2020.109654
dc.identifier.issn0042-207X
dc.identifier.issn1879-2715
dc.identifier.scopus2-s2.0-85089400509en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.urihttps://doi.org/10.1016/j.vacuum.2020.109654
dc.identifier.urihttp://hdl.handle.net/20.500.12403/3126
dc.identifier.volume181en_US
dc.identifier.wosWOS:000580600700035en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherPergamon-Elsevier Science Ltden_US
dc.relation.ispartofVacuumen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectGraphene siliconen_US
dc.subjectI-V characteristicsen_US
dc.subjectBarrier heighten_US
dc.subjectIdeality factoren_US
dc.subjectSeries resistanceen_US
dc.titleCurrent voltage analyses of Graphene-based structure onto Al2O3/p-Si using various methodsen_US
dc.typeArticleen_US

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