Evaluation of the optical, structural, and morphological characteristics of a Sn-doped ?-Fe2O3 thin film fabricated using RF and DC magnetron Co-sputtering technique

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dc.authorid0009-0002-1199-5632
dc.authorid0000-0002-6579-2737
dc.authorid0000-0002-1764-2566
dc.contributor.authorSalari, Maryam Abdolahpour
dc.contributor.authorSenay, Volkan
dc.contributor.authorMuglu, Gunay Merhan
dc.contributor.authorSaritas, Sevda
dc.contributor.authorKundakci, Mutlu
dc.date.accessioned2026-02-28T12:17:47Z
dc.date.available2026-02-28T12:17:47Z
dc.date.issued2025
dc.departmentBayburt Üniversitesi
dc.description.abstractIn this research, a Sn-doped hematite (alpha-Fe2O3) thin film on a glass substrate was synthesized using DC and RF magnetron sputtering techniques, and the physical features of the film were analyzed in detail. This study, conducted to investigate the effects of Sn doping on the hematite structure, evaluated the optical and morphological attributes of the thin film using advanced characterization techniques such as UV-VIS spectroscopy, Raman spectroscopy, XRD, SEM, EDS, and AFM. The optical band gap was determined from absorption measurement and calculated to be 2.12 eV. Raman spectroscopy results revealed various characteristic peaks between 100 cm(-1) and 1500 cm(-1). A strong (214) diffraction peak confirms the enhanced hematite phase formation in the thin film. The crystallite size of the Sn-doped thin film, calculated via Scherrer's formula, is 20 nm. SEM images showed that the thin film exhibited a smooth and homogeneous surface morphology on the glass substrate. According to the EDS results, the atomic doping ratio of Sn in Fe2O3 is 2.84 %. Additionally, AFM analysis confirmed that the Sn-doped alpha-Fe2O3 thin film had a smooth surface, as indicated by a low RMS (Root Mean Square) roughness value of 8.11 nm. These properties suggest that the thin film could be suitable for optoelectronic applications. The study emphasizes the potential of Sn-doped alpha-Fe2O3 thin films, particularly for optoelectronic and photocatalytic devices, and underscores the need for further investigation of these materials. Furthermore, it was concluded that these materials should be considered in a broader context for their potential use in various technological applications.
dc.description.sponsorshipDepartment of Scientific Research Project Management (BAP) at Atatrk University, Turkey [FBA-2024-13863]; Ataturk University
dc.description.sponsorshipThis study was funded by the Department of Scientific Research Project Management (BAP) at Atatuerk University, Turkey under project number FBA-2024-13863. We want to thank the Ataturk University for supporting the project.
dc.identifier.doi10.1016/j.ceramint.2025.02.410
dc.identifier.endpage23076
dc.identifier.issn0272-8842
dc.identifier.issn1873-3956
dc.identifier.issue17
dc.identifier.scopus2-s2.0-86000367513
dc.identifier.scopusqualityQ1
dc.identifier.startpage23068
dc.identifier.urihttps://doi.org/10.1016/j.ceramint.2025.02.410
dc.identifier.urihttps://hdl.handle.net/20.500.12403/5977
dc.identifier.volume51
dc.identifier.wosWOS:001513401200005
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier Sci Ltd
dc.relation.ispartofCeramics International
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20260218
dc.subjectalpha-Fe-2 O-3
dc.subjectTin doping
dc.subjectXRD
dc.subjectAFM
dc.subjectSEM
dc.subjectCo-sputtering
dc.titleEvaluation of the optical, structural, and morphological characteristics of a Sn-doped ?-Fe2O3 thin film fabricated using RF and DC magnetron Co-sputtering technique
dc.typeArticle

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