Zn/ZnSe thin films deposition by RF magnetron sputtering
Küçük Resim Yok
Tarih
2017
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Springer New York LLC
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
In this paper, Zn/ZnSe thin films were deposited on glass substrates by RF magnetron sputtering system. XRD analyses were done. Zn and ZnSe phases were obtained. Miller indices of obtained Zn phases were detected in (320), (620) and (112) crystal formation. For the ZnSe phases, only one peak of (110)/(220) was observed. The surface morphology of the samples was investigated by an atomic force microscopy tools. It found that average roughness of the films was increased by raised RF power. The thin films around 80 % of high transmittance were measured. The band gap values were calculated as to be ~2.80 eV by the Cauchy model. The calculated refractive indices values were approximately 2.25 by a relation between the refractive index and the band gap. © 2016, Springer Science+Business Media New York.
Açıklama
Anahtar Kelimeler
Atomic force microscopy, Deposition, Energy gap, Magnetron sputtering, Refractive index, Substrates, Zinc, Band-gap values, Cauchy model, Crystal formation, Glass substrates, High transmittance, Miller indices, rf-Magnetron sputtering, Thin films deposition, Thin films, Atomic force microscopy, Deposition, Energy gap, Magnetron sputtering, Refractive index, Substrates, Zinc, Band-gap values, Cauchy model, Crystal formation, Glass substrates, High transmittance, Miller indices, rf-Magnetron sputtering, Thin films deposition, Thin films
Kaynak
Journal of Materials Science: Materials in Electronics
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
28
Sayı
3
