Zn/ZnSe thin films deposition by RF magnetron sputtering

Küçük Resim Yok

Tarih

2017

Dergi Başlığı

Dergi ISSN

Cilt Başlığı

Yayıncı

Springer New York LLC

Erişim Hakkı

info:eu-repo/semantics/closedAccess

Özet

In this paper, Zn/ZnSe thin films were deposited on glass substrates by RF magnetron sputtering system. XRD analyses were done. Zn and ZnSe phases were obtained. Miller indices of obtained Zn phases were detected in (320), (620) and (112) crystal formation. For the ZnSe phases, only one peak of (110)/(220) was observed. The surface morphology of the samples was investigated by an atomic force microscopy tools. It found that average roughness of the films was increased by raised RF power. The thin films around 80 % of high transmittance were measured. The band gap values were calculated as to be ~2.80 eV by the Cauchy model. The calculated refractive indices values were approximately 2.25 by a relation between the refractive index and the band gap. © 2016, Springer Science+Business Media New York.

Açıklama

Anahtar Kelimeler

Atomic force microscopy, Deposition, Energy gap, Magnetron sputtering, Refractive index, Substrates, Zinc, Band-gap values, Cauchy model, Crystal formation, Glass substrates, High transmittance, Miller indices, rf-Magnetron sputtering, Thin films deposition, Thin films, Atomic force microscopy, Deposition, Energy gap, Magnetron sputtering, Refractive index, Substrates, Zinc, Band-gap values, Cauchy model, Crystal formation, Glass substrates, High transmittance, Miller indices, rf-Magnetron sputtering, Thin films deposition, Thin films

Kaynak

Journal of Materials Science: Materials in Electronics

WoS Q Değeri

Q2

Scopus Q Değeri

Q2

Cilt

28

Sayı

3

Künye