A study on some physical properties of a Pb-doped GaAs thin film produced by thermionic vacuum arc
Küçük Resim Yok
Tarih
2017
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier Ltd
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
A 155 nm Pb-doped GaAs thin film was deposited on a glass substrate by means of the thermionic vacuum arc technique in 30 s using GaAs and Pb pellets as source materials. Tools and techniques such as an optical reflectometer, UV-VIS-NIR spectrophotometer, FESEM, EDX, AFM and optical tensiometer were employed to investigate the physical properties of the produced film. From the optical investigations, the refractive index at the wavelength of 632.8 nm and optical band gap of the film were found to be 4.03 and 1.13 eV respectively. It was observed that Pb doping increased the value of refractive index and decreased the band gap value. A uniform surface morphology with fine grain covering the entire surface was observed through the FESEM and AFM studies while 50–80 nm grain size and 2.22 nm root mean square roughness values were obtained. The EDX analysis confirmed the presence of Ga, As and Pb elements in the film. The wetting experiments revealed that the contact angle value was dependent on the liquid used. The surface free energy calculated with OWRK/Fowkes and Equation of State approaches were about 26 mN/m. © 2017 Elsevier B.V.
Açıklama
Anahtar Kelimeler
AFM, FESEM, Pb-doped GaAs, Semiconductor, Thin film, Energy gap, Equations of state, Free energy, Gallium arsenide, Lead, Physical properties, Reflectometers, Refractive index, Semiconducting gallium, Semiconductor doping, Semiconductor materials, Substrates, Thin films, Vacuum applications, Vacuum technology, Wetting, FESEM, GaAs, Optical investigation, Optical reflectometers, Root mean square roughness, Thermionic vacuum arc, Tools and techniques, UV-VIS-NIR spectrophotometers, Optical films, AFM, FESEM, Pb-doped GaAs, Semiconductor, Thin film, Energy gap, Equations of state, Free energy, Gallium arsenide, Lead, Physical properties, Reflectometers, Refractive index, Semiconducting gallium, Semiconductor doping, Semiconductor materials, Substrates, Thin films, Vacuum applications, Vacuum technology, Wetting, FESEM, GaAs, Optical investigation, Optical reflectometers, Root mean square roughness, Thermionic vacuum arc, Tools and techniques, UV-VIS-NIR spectrophotometers, Optical films
Kaynak
Journal of Alloys and Compounds
WoS Q Değeri
Q1
Scopus Q Değeri
Q1
Cilt
720
