Ara
Toplam kayıt 6, listelenen: 1-6
Optical and Surface Characteristics of Mg-Doped GaAs Nanocrystalline Thin Film Deposited by Thermionic Vacuum Arc Technique
(Springer New York LLC, 2017)
Magnesium (Mg) is the most promising p-type dopant for gallium arsenide (GaAs) semiconductor technology. Mg-doped GaAs nanocrystalline thin film has been deposited at room temperature by the thermionic vacuum arc technique, ...
The surface morphology research of the BGaN thin films deposited by thermionic vacuum arc
(Elsevier Ltd, 2017)
In this paper, BGaN thin films with two different thicknesses were deposited on two different substrates and their surface morphologies were investigated. The amorphous glass and semi-crystalline polyethylene terephthalate ...
Heavily carbon doped GaAs nanocrystalline thin film deposited by thermionic vacuum arc method
(Elsevier Ltd, 2016)
In this paper, we introduced a new different thin film deposition method for heavily carbon doped GaAs. Used method is thermionic vacuum arc (TVA) and first used for the carbon doping process. The method is very fast ...
The influence of voltage applied between the electrodes on optical and morphological properties of the InGaN thin films grown by thermionic vacuum arc
(John Wiley and Sons Inc., 2016)
The aim of this research is to investigate the optical and morphological properties of the InGaN thin films deposited onto amorphous glass substrates in two separate experiments with two different voltages applied between ...
Deposition of a Mo doped GaN thin film on glass substrate by thermionic vacuum arc (TVA)
(Springer New York LLC, 2015)
Current research presents a new deposition method for GaN thin films that produces in a very short production time for GaN-based solid-state applications. A Mo doped GaN thin film on a glass substrate was produced by ...
GaN thin film deposition on glass and PET substrates by thermionic vacuum arc (TVA)
(Elsevier Ltd, 2015)
In this paper, GaN thin film production was realized by thermionic vacuum arc (TVA), a plasma deposition technique, for the first time. We present a new deposition mechanism for GaN thin films with a very short production ...