In this research, transparent titania (TiO2) thin films were deposited on a glass microscope slide and on a flexible polyethylene terephthalate (PET) substrate under a high vacuum condition by means of the thermionic vacuum ...

Magnesium (Mg) is the most promising p-type dopant for gallium arsenide (GaAs) semiconductor technology. Mg-doped GaAs nanocrystalline thin film has been deposited at room temperature by the thermionic vacuum arc technique, ...

This study focuses on characterization and understanding of the substrate effect on Ge doped GaN thin films coated onto transparent substrates. The produced films were deposited onto unheated glass and unheated polyethylene ...

A 155 nm Pb-doped GaAs thin film was deposited on a glass substrate by means of the thermionic vacuum arc technique in 30 s using GaAs and Pb pellets as source materials. Tools and techniques such as an optical reflectometer, ...

In this paper, BGaN thin films with two different thicknesses were deposited on two different substrates and their surface morphologies were investigated. The amorphous glass and semi-crystalline polyethylene terephthalate ...