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Öğe The Al doping effect on the surface, optical, electrical and nanomechanical properties of the ZnO and AZO thin films prepared by RF sputtering technique(Elsevier Ltd, 2017) Pat S.; Mohammadigharehbagh R.; Özen S.; Şenay V.; Yudar H.H.; Korkmaz Ş.In this study, ZnO and aluminum doped ZnO (AZO) thin films were deposited at constant RF power of 100 W for the determine of the structural, surface, optical, electrical and nanomechanical properties. X–Ray diffraction (XRD), atomic force microscopy (AFM), nanoindentation technique and UV–Vis spectrophotometer were used. ZnO (100) and ZnO (004) orientations were detected in the ZnO and AZO films. The crystallite size values for the films were calculated as to be as 35 nm and 20 nm for ZnO and AZO thin films, respectively. It was found that the roughness values decreased to 3.15 nm from 5.15 nm for AZO and ZnO films, respectively. The hardness values of the ZnO and AZO thin films are measured as 7 GPa and 11 GPa. Young's modulus values were determined as 155 GPa and 95 GPa for ZnO and AZO films, respectively. The ZnO and AZO thin films have high transparency. © 2017 Elsevier LtdÖğe Effect of XRD relative intensities of the Li (002) on surface, optical and electrochemical impedance spectroscopy analyses of the deposited LiCoO2 thin film(Springer New York LLC, 2017) Yudar H.H.; Pat S.; Özen S.; Şenay V.; Korkmaz Ş.; Pat Z.In this paper, the effect of RF power on LiCoO2 thin films was investigated using X-ray diffractometer (XRD), atomic force microscopy, UV–Vis spectrophotometer, and potentiostat. The microstructural, surface, optical and electrochemical impedance measurements were performed to LiCoO2 thin films, are used to for the fully solid-state battery cathode material. According to obtained results, the relative intensities of the Li (002) crystal phase in XRD patterns of deposited LiCoO2 thin films were increased by increasing applied RF power, for the first time. The intensity of the LiCoO2 (104) plane is nearly invariant. The relative intensities of the LiCoO2 (113) plane were decreased by increasing RF power. The peak locations of the Li (002) and LiCoO2 (104) were not changed. It was found that Li (002) relative intensities affect the all investigated parameters for the LiCoO2 thin films. Especially, transmittance value increased about 20%. The band gap of the deposited film was changed 100–300 meV drastically. Deposited samples are shown high transparency in the visible region. Randles circuit was used for the equivalent circuit model. Nyquist plots, fitting parameters values and value of the circuit elements were estimated by ZSim software. © 2017, Springer Science+Business Media New York.Öğe Morphology, composition, structure and optical properties of CuO/Cu2O thin films prepared by RF sputtering method(Elsevier Ltd, 2016) Korkmaz Ş.; Geçici B.; Korkmaz S.D.; Mohammadigharehbagh R.; Pat S.; Özen S.; Şenay V.; Yudar H.H.In this paper, copper oxide (CuO/Cu2O) nanocrystalline thin films were deposited by radio frequency (RF) magnetron sputtering system at 75 W and 100 W. The surface, optical, composition and structural properties of obtaining samples were characterized by using atomic force microscopy (AFM), UV–Vis spectrophotometer, field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDX) and X-ray diffraction (XRD). The optical band gaps of produced films were calculated as 2.05 eV and 1.83 eV for 75 W and 100 W. The layer's thicknesses were measured as 20 nm and 50 nm using a Filmetrics F20. FESEM images of the samples prove the AFM images change and also show homogeneity of thin films and variation relative to power change, thus revealed the surface of samples disturb in homogen mode. EDX results denote presence of Cu and O elements inside the deposited samples. © 2016Öğe Surface and optical properties of indium tin oxide layer deposition by RF magnetron sputtering in argon atmosphere(Springer Verlag, 2016) Yudar H.H.; Korkmaz Ş.; Özen S.; Şenay V.; Pat S.This study focused on the characterization and properties of transparent and conductive indium tin oxide (ITO) thin films deposited in argon atmosphere. ITO thin films were coated onto glass substrates by radio frequency (RF) magnetron sputtering technique at 75 and 100 W RF powers. Structural characteristics of producing films were investigated through X-ray diffraction analysis. UV–Vis spectrophotometer and interferometer were used to determine transmittance, absorbance and reflectance values of samples. The surface morphology of the films was characterized by atomic force microscope. The calculated band gaps were 3.8 and 4.1 eV for the films at 75 and 100 W, respectively. The effect of RF power on crystallinity of prepared films was explored using mentioned analysis methods. The high RF power caused higher poly crystallinity in the produced samples. The thickness and refractive index values for all samples increased respect to an increment of RF power and were calculated as 20, 50 nm and 1.71, 1.86 for samples at 75 and 100 W, respectively. Finally, the estimated grain sizes for all prepared films decreased with increasing of 2? degrees, and the number of crystallite per unit volume was calculated. It was found that nearly all properties including sheet resistance and resistivity depend on the RF power. © 2016, Springer-Verlag Berlin Heidelberg.Öğe Zn/ZnSe thin films deposition by RF magnetron sputtering(Springer New York LLC, 2017) Yudar H.H.; Pat S.; Korkmaz Ş.; Özen S.; Şenay V.In this paper, Zn/ZnSe thin films were deposited on glass substrates by RF magnetron sputtering system. XRD analyses were done. Zn and ZnSe phases were obtained. Miller indices of obtained Zn phases were detected in (320), (620) and (112) crystal formation. For the ZnSe phases, only one peak of (110)/(220) was observed. The surface morphology of the samples was investigated by an atomic force microscopy tools. It found that average roughness of the films was increased by raised RF power. The thin films around 80 % of high transmittance were measured. The band gap values were calculated as to be ~2.80 eV by the Cauchy model. The calculated refractive indices values were approximately 2.25 by a relation between the refractive index and the band gap. © 2016, Springer Science+Business Media New York.
