Surface and optical properties of indium tin oxide layer deposition by RF magnetron sputtering in argon atmosphere

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dc.authorid57189904041
dc.authorid7003415405
dc.authorid55897767500
dc.authorid55897416100
dc.authorid9274843500
dc.contributor.authorYudar H.H.
dc.contributor.authorKorkmaz Ş.
dc.contributor.authorÖzen S.
dc.contributor.authorŞenay V.
dc.contributor.authorPat S.
dc.date.accessioned20.04.201910:49:12
dc.date.accessioned2019-04-20T21:43:33Z
dc.date.available20.04.201910:49:12
dc.date.available2019-04-20T21:43:33Z
dc.date.issued2016
dc.departmentBayburt Üniversitesien_US
dc.description.abstractThis study focused on the characterization and properties of transparent and conductive indium tin oxide (ITO) thin films deposited in argon atmosphere. ITO thin films were coated onto glass substrates by radio frequency (RF) magnetron sputtering technique at 75 and 100 W RF powers. Structural characteristics of producing films were investigated through X-ray diffraction analysis. UV–Vis spectrophotometer and interferometer were used to determine transmittance, absorbance and reflectance values of samples. The surface morphology of the films was characterized by atomic force microscope. The calculated band gaps were 3.8 and 4.1 eV for the films at 75 and 100 W, respectively. The effect of RF power on crystallinity of prepared films was explored using mentioned analysis methods. The high RF power caused higher poly crystallinity in the produced samples. The thickness and refractive index values for all samples increased respect to an increment of RF power and were calculated as 20, 50 nm and 1.71, 1.86 for samples at 75 and 100 W, respectively. Finally, the estimated grain sizes for all prepared films decreased with increasing of 2? degrees, and the number of crystallite per unit volume was calculated. It was found that nearly all properties including sheet resistance and resistivity depend on the RF power. © 2016, Springer-Verlag Berlin Heidelberg.en_US
dc.identifier.doi10.1007/s00339-016-0262-x
dc.identifier.issn0947-8396
dc.identifier.issue8
dc.identifier.scopus2-s2.0-84979284423en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.urihttps://dx.doi.org/10.1007/s00339-016-0262-x
dc.identifier.urihttps://hdl.handle.net/20.500.12403/597
dc.identifier.volume122
dc.identifier.wosWOS:000380667500034en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSpringer Verlag
dc.relation.ispartofApplied Physics A: Materials Science and Processingen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectAtomic force microscopy
dc.subjectConductive films
dc.subjectEnergy gap
dc.subjectFilm preparation
dc.subjectIndium
dc.subjectITO glass
dc.subjectMagnetron sputtering
dc.subjectOptical properties
dc.subjectOxide films
dc.subjectReflection
dc.subjectRefractive index
dc.subjectSubstrates
dc.subjectTin
dc.subjectTin oxides
dc.subjectX ray diffraction analysis
dc.subjectArgon atmospheres
dc.subjectGlass substrates
dc.subjectIndium tin oxide layers
dc.subjectIndium tin oxide thin films
dc.subjectRadio frequency magnetron sputtering
dc.subjectReflectance values
dc.subjectrf-Magnetron sputtering
dc.subjectStructural characteristics
dc.subjectThin films
dc.subjectAtomic force microscopy
dc.subjectConductive films
dc.subjectEnergy gap
dc.subjectFilm preparation
dc.subjectIndium
dc.subjectITO glass
dc.subjectMagnetron sputtering
dc.subjectOptical properties
dc.subjectOxide films
dc.subjectReflection
dc.subjectRefractive index
dc.subjectSubstrates
dc.subjectTin
dc.subjectTin oxides
dc.subjectX ray diffraction analysis
dc.subjectArgon atmospheres
dc.subjectGlass substrates
dc.subjectIndium tin oxide layers
dc.subjectIndium tin oxide thin films
dc.subjectRadio frequency magnetron sputtering
dc.subjectReflectance values
dc.subjectrf-Magnetron sputtering
dc.subjectStructural characteristics
dc.subjectThin films
dc.titleSurface and optical properties of indium tin oxide layer deposition by RF magnetron sputtering in argon atmosphereen_US
dc.typeArticleen_US

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