Heavily carbon doped GaAs nanocrystalline thin film deposited by thermionic vacuum arc method
Küçük Resim Yok
Tarih
2016
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier Ltd
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
In this paper, we introduced a new different thin film deposition method for heavily carbon doped GaAs. Used method is thermionic vacuum arc (TVA) and first used for the carbon doping process. The method is very fast deposition process for the other growth method such as metal organic chemical vapor deposition, molecular beam epitaxy, molecular organic molecular beam epitaxy. The smallest grain size of GaAs and doped GaAs were obtained by carbon doping process. Mean crystalline size and height of crystalline size were found to be 3.4 nm and 4 nm, respectively. Crystal direction was found to be (022) plane and (024) plane for the sample at 45.322° and 75.060°, respectively. The production process and obtained results show that used methods is very simple, low cost, eco friendly and very fast method for the carbon doped GaAs. © 2015 Elsevier B.V.
Açıklama
Anahtar Kelimeler
C doped GaAs, Optical analyses, Optical properties, Surface properties, Chemical beam epitaxy, Crystalline materials, Deposition, Epitaxial growth, Gallium arsenide, Metallorganic chemical vapor deposition, Molecular beam epitaxy, Molecular beams, Nanocrystals, Optical properties, Organic chemicals, Organometallics, Semiconducting gallium, Semiconductor doping, Surface properties, Thin films, Vacuum applications, Vacuum technology, GaAs, Nanocrystalline thin films, Optical analysis, Organic molecular beam epitaxy, Production process, Thermionic vacuum arc, Thermionic vacuum arc methods, Thin-film depositions, Vapor deposition, C doped GaAs, Optical analyses, Optical properties, Surface properties, Chemical beam epitaxy, Crystalline materials, Deposition, Epitaxial growth, Gallium arsenide, Metallorganic chemical vapor deposition, Molecular beam epitaxy, Molecular beams, Nanocrystals, Optical properties, Organic chemicals, Organometallics, Semiconducting gallium, Semiconductor doping, Surface properties, Thin films, Vacuum applications, Vacuum technology, GaAs, Nanocrystalline thin films, Optical analysis, Organic molecular beam epitaxy, Production process, Thermionic vacuum arc, Thermionic vacuum arc methods, Thin-film depositions, Vapor deposition
Kaynak
Journal of Alloys and Compounds
WoS Q Değeri
Q1
Scopus Q Değeri
Q1
Cilt
657
