Heavily carbon doped GaAs nanocrystalline thin film deposited by thermionic vacuum arc method

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dc.authorid9274843500
dc.authorid7003415405
dc.authorid55897767500
dc.authorid55897416100
dc.contributor.authorPat S.
dc.contributor.authorKorkmaz Ş.
dc.contributor.authorÖzen S.
dc.contributor.authorŞenay V.
dc.date.accessioned20.04.201910:49:12
dc.date.accessioned2019-04-20T21:43:40Z
dc.date.available20.04.201910:49:12
dc.date.available2019-04-20T21:43:40Z
dc.date.issued2016
dc.departmentBayburt Üniversitesien_US
dc.description.abstractIn this paper, we introduced a new different thin film deposition method for heavily carbon doped GaAs. Used method is thermionic vacuum arc (TVA) and first used for the carbon doping process. The method is very fast deposition process for the other growth method such as metal organic chemical vapor deposition, molecular beam epitaxy, molecular organic molecular beam epitaxy. The smallest grain size of GaAs and doped GaAs were obtained by carbon doping process. Mean crystalline size and height of crystalline size were found to be 3.4 nm and 4 nm, respectively. Crystal direction was found to be (022) plane and (024) plane for the sample at 45.322° and 75.060°, respectively. The production process and obtained results show that used methods is very simple, low cost, eco friendly and very fast method for the carbon doped GaAs. © 2015 Elsevier B.V.en_US
dc.identifier.doi10.1016/j.jallcom.2015.10.150
dc.identifier.endpage716
dc.identifier.issn0925-8388
dc.identifier.scopus2-s2.0-84945969932en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.startpage711
dc.identifier.urihttps://dx.doi.org/10.1016/j.jallcom.2015.10.150
dc.identifier.urihttps://hdl.handle.net/20.500.12403/641
dc.identifier.volume657
dc.identifier.wosWOS:000366934800097en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevier Ltd
dc.relation.ispartofJournal of Alloys and Compoundsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectC doped GaAs
dc.subjectOptical analyses
dc.subjectOptical properties
dc.subjectSurface properties
dc.subjectChemical beam epitaxy
dc.subjectCrystalline materials
dc.subjectDeposition
dc.subjectEpitaxial growth
dc.subjectGallium arsenide
dc.subjectMetallorganic chemical vapor deposition
dc.subjectMolecular beam epitaxy
dc.subjectMolecular beams
dc.subjectNanocrystals
dc.subjectOptical properties
dc.subjectOrganic chemicals
dc.subjectOrganometallics
dc.subjectSemiconducting gallium
dc.subjectSemiconductor doping
dc.subjectSurface properties
dc.subjectThin films
dc.subjectVacuum applications
dc.subjectVacuum technology
dc.subjectGaAs
dc.subjectNanocrystalline thin films
dc.subjectOptical analysis
dc.subjectOrganic molecular beam epitaxy
dc.subjectProduction process
dc.subjectThermionic vacuum arc
dc.subjectThermionic vacuum arc methods
dc.subjectThin-film depositions
dc.subjectVapor deposition
dc.subjectC doped GaAs
dc.subjectOptical analyses
dc.subjectOptical properties
dc.subjectSurface properties
dc.subjectChemical beam epitaxy
dc.subjectCrystalline materials
dc.subjectDeposition
dc.subjectEpitaxial growth
dc.subjectGallium arsenide
dc.subjectMetallorganic chemical vapor deposition
dc.subjectMolecular beam epitaxy
dc.subjectMolecular beams
dc.subjectNanocrystals
dc.subjectOptical properties
dc.subjectOrganic chemicals
dc.subjectOrganometallics
dc.subjectSemiconducting gallium
dc.subjectSemiconductor doping
dc.subjectSurface properties
dc.subjectThin films
dc.subjectVacuum applications
dc.subjectVacuum technology
dc.subjectGaAs
dc.subjectNanocrystalline thin films
dc.subjectOptical analysis
dc.subjectOrganic molecular beam epitaxy
dc.subjectProduction process
dc.subjectThermionic vacuum arc
dc.subjectThermionic vacuum arc methods
dc.subjectThin-film depositions
dc.subjectVapor deposition
dc.titleHeavily carbon doped GaAs nanocrystalline thin film deposited by thermionic vacuum arc methoden_US
dc.typeArticleen_US

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