Dielectric characteristics and electrical conductivity behavior of graphene/Al2O3/p-type silicon structure
Küçük Resim Yok
Tarih
2021
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier Science Sa
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Graphene nanosheets (Gns) obtained by the chemical vapor deposition (CVD) method have been employed for the fabrication of Graphene/Al2O3/p-type silicon (Si) structure. The Raman, scanning-electron-microscopy (SEM) and transmission-electron-microscopy (TEM) have been used to analyze the morphology and structural features of the graphene nanosheet. The dielectric features and electrical-conductivity of Graphene/Al2O3/p-type Si have been studied in the frequency range 10 kHz-400 kHz and in the voltage range,-4 V to +4 V at 300 K. The obtained experimental outcomes imply that electrical conductivity and dielectric features of Graphene/ Al2O3/p-type Si were found out to be powerful functions of frequency and applied bias voltage. It can be seen that almost all of the interface states between metal and silicon contribute to modify of dielectric features of Graphene/Al2O3/p-type Si structure.
Açıklama
Anahtar Kelimeler
Graphene/Al2O3/p-type silicon structure, Dielectric characteristics, Electrical conductivity, Interface states
Kaynak
Materials Chemistry and Physics
WoS Q Değeri
Q2
Scopus Q Değeri
Q1
Cilt
258
