Dielectric characteristics and electrical conductivity behavior of graphene/Al2O3/p-type silicon structure

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dc.authoridbilge ocak, sema/0000-0002-0590-7555
dc.authoridOrhan, Elif/0000-0002-3949-6141
dc.contributor.authorKaymak, Nuriye
dc.contributor.authorOrhan, Elif Oz
dc.contributor.authorBayram, Ozkan
dc.contributor.authorOcak, Sema Bilge
dc.date.accessioned2024-10-04T18:49:30Z
dc.date.available2024-10-04T18:49:30Z
dc.date.issued2021
dc.departmentBayburt Üniversitesien_US
dc.description.abstractGraphene nanosheets (Gns) obtained by the chemical vapor deposition (CVD) method have been employed for the fabrication of Graphene/Al2O3/p-type silicon (Si) structure. The Raman, scanning-electron-microscopy (SEM) and transmission-electron-microscopy (TEM) have been used to analyze the morphology and structural features of the graphene nanosheet. The dielectric features and electrical-conductivity of Graphene/Al2O3/p-type Si have been studied in the frequency range 10 kHz-400 kHz and in the voltage range,-4 V to +4 V at 300 K. The obtained experimental outcomes imply that electrical conductivity and dielectric features of Graphene/ Al2O3/p-type Si were found out to be powerful functions of frequency and applied bias voltage. It can be seen that almost all of the interface states between metal and silicon contribute to modify of dielectric features of Graphene/Al2O3/p-type Si structure.en_US
dc.description.sponsorshipGazi University Scientific Research Council (BAP) [18/2015-03, 65/2019-019, 05/2020-13, 05/2020-15]en_US
dc.description.sponsorshipWe thank the Gazi University Scientific Research Council (BAP) for funding the research projects (18/2015-03, 65/2019-019, 05/2020-13 and, 05/2020-15).en_US
dc.identifier.doi10.1016/j.matchemphys.2020.123878
dc.identifier.issn0254-0584
dc.identifier.issn1879-3312
dc.identifier.scopus2-s2.0-85092431520en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.urihttps://doi.org/10.1016/j.matchemphys.2020.123878
dc.identifier.urihttp://hdl.handle.net/20.500.12403/3185
dc.identifier.volume258en_US
dc.identifier.wosWOS:000595151700002en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevier Science Saen_US
dc.relation.ispartofMaterials Chemistry and Physicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectGraphene/Al2O3/p-type silicon structureen_US
dc.subjectDielectric characteristicsen_US
dc.subjectElectrical conductivityen_US
dc.subjectInterface statesen_US
dc.titleDielectric characteristics and electrical conductivity behavior of graphene/Al2O3/p-type silicon structureen_US
dc.typeArticleen_US

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