Deposition of a Mo doped GaN thin film on glass substrate by thermionic vacuum arc (TVA)
Küçük Resim Yok
Tarih
2015
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Springer New York LLC
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Current research presents a new deposition method for GaN thin films that produces in a very short production time for GaN-based solid-state applications. A Mo doped GaN thin film on a glass substrate was produced by thermionic vacuum arc (TVA) technique. The TVA technique is a novel non-reactive plasma technique. The optical properties were determined by Filmetrics F20 interferometer and UV–Vis double beam spectrophotometer. The surface morphology was analyzed using field emission scanning electron microscopy and atomic force microscopy. The mean thickness value was measured as 100 nm by Filmetrics interferometer. The crystalline structure of the produced thin film has a Wurtzite crystal structure (004) as obtained by X-ray diffraction. Hardness value was determined as 14 GPa with the Oliver–Pharr method. The obtained properties are consistent with the values reported in related literature. The findings indicate that the TVA method provides advantages for optical and industrial applications. © 2015, Springer Science+Business Media New York.
Açıklama
Anahtar Kelimeler
Atomic force microscopy, Crystal structure, Field emission microscopes, Gallium nitride, Glass, Interferometers, Optical properties, Scanning electron microscopy, Substrates, Thin films, Vacuum applications, Vacuum technology, X ray diffraction, Zinc sulfide, Crystalline structure, Deposition methods, Field emission scanning electron microscopy, Glass substrates, Reactive plasmas, Thermionic vacuum arc, Thickness value, Wurtzite crystal structure, Deposition, Atomic force microscopy, Crystal structure, Field emission microscopes, Gallium nitride, Glass, Interferometers, Optical properties, Scanning electron microscopy, Substrates, Thin films, Vacuum applications, Vacuum technology, X ray diffraction, Zinc sulfide, Crystalline structure, Deposition methods, Field emission scanning electron microscopy, Glass substrates, Reactive plasmas, Thermionic vacuum arc, Thickness value, Wurtzite crystal structure, Deposition
Kaynak
Journal of Materials Science: Materials in Electronics
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
26
Sayı
7
