Deposition of a Mo doped GaN thin film on glass substrate by thermionic vacuum arc (TVA)

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dc.authorid55897767500
dc.authorid55897416100
dc.authorid9274843500
dc.authorid7003415405
dc.contributor.authorÖzen S.
dc.contributor.authorŞenay V.
dc.contributor.authorPat S.
dc.contributor.authorKorkmaz Ş.
dc.date.accessioned20.04.201910:49:12
dc.date.accessioned2019-04-20T21:43:49Z
dc.date.available20.04.201910:49:12
dc.date.available2019-04-20T21:43:49Z
dc.date.issued2015
dc.departmentBayburt Üniversitesien_US
dc.description.abstractCurrent research presents a new deposition method for GaN thin films that produces in a very short production time for GaN-based solid-state applications. A Mo doped GaN thin film on a glass substrate was produced by thermionic vacuum arc (TVA) technique. The TVA technique is a novel non-reactive plasma technique. The optical properties were determined by Filmetrics F20 interferometer and UV–Vis double beam spectrophotometer. The surface morphology was analyzed using field emission scanning electron microscopy and atomic force microscopy. The mean thickness value was measured as 100 nm by Filmetrics interferometer. The crystalline structure of the produced thin film has a Wurtzite crystal structure (004) as obtained by X-ray diffraction. Hardness value was determined as 14 GPa with the Oliver–Pharr method. The obtained properties are consistent with the values reported in related literature. The findings indicate that the TVA method provides advantages for optical and industrial applications. © 2015, Springer Science+Business Media New York.en_US
dc.identifier.doi10.1007/s10854-015-3027-y
dc.identifier.endpage5064
dc.identifier.issn0957-4522
dc.identifier.issue7
dc.identifier.scopus2-s2.0-84931568215en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage5060
dc.identifier.urihttps://dx.doi.org/10.1007/s10854-015-3027-y
dc.identifier.urihttps://hdl.handle.net/20.500.12403/688
dc.identifier.volume26
dc.identifier.wosWOS:000358060700072en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSpringer New York LLC
dc.relation.ispartofJournal of Materials Science: Materials in Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectAtomic force microscopy
dc.subjectCrystal structure
dc.subjectField emission microscopes
dc.subjectGallium nitride
dc.subjectGlass
dc.subjectInterferometers
dc.subjectOptical properties
dc.subjectScanning electron microscopy
dc.subjectSubstrates
dc.subjectThin films
dc.subjectVacuum applications
dc.subjectVacuum technology
dc.subjectX ray diffraction
dc.subjectZinc sulfide
dc.subjectCrystalline structure
dc.subjectDeposition methods
dc.subjectField emission scanning electron microscopy
dc.subjectGlass substrates
dc.subjectReactive plasmas
dc.subjectThermionic vacuum arc
dc.subjectThickness value
dc.subjectWurtzite crystal structure
dc.subjectDeposition
dc.subjectAtomic force microscopy
dc.subjectCrystal structure
dc.subjectField emission microscopes
dc.subjectGallium nitride
dc.subjectGlass
dc.subjectInterferometers
dc.subjectOptical properties
dc.subjectScanning electron microscopy
dc.subjectSubstrates
dc.subjectThin films
dc.subjectVacuum applications
dc.subjectVacuum technology
dc.subjectX ray diffraction
dc.subjectZinc sulfide
dc.subjectCrystalline structure
dc.subjectDeposition methods
dc.subjectField emission scanning electron microscopy
dc.subjectGlass substrates
dc.subjectReactive plasmas
dc.subjectThermionic vacuum arc
dc.subjectThickness value
dc.subjectWurtzite crystal structure
dc.subjectDeposition
dc.titleDeposition of a Mo doped GaN thin film on glass substrate by thermionic vacuum arc (TVA)en_US
dc.typeArticleen_US

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