Comparisons of surface and optical properties of the heavily carbon-doped GaN nanocrystalline films deposited by thermionic vacuum arc method

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dc.authorid9274843500
dc.authorid55897767500
dc.authorid55897416100
dc.authorid7003415405
dc.contributor.authorPat S.
dc.contributor.authorÖzen S.
dc.contributor.authorŞenay V.
dc.contributor.authorKorkmaz Ş.
dc.date.accessioned20.04.201910:49:12
dc.date.accessioned2019-04-20T21:43:29Z
dc.date.available20.04.201910:49:12
dc.date.available2019-04-20T21:43:29Z
dc.date.issued2016
dc.departmentBayburt Üniversitesien_US
dc.description.abstractIn this paper, heavily C-doped GaN samples were deposited on glass and PET substrates by the thermionic vacuum arc (TVA) method, for the first time. Microstructure, surface and optical properties of the carbon-doped GaN samples were investigated by X-ray diffraction (XRD), field emission scanning electron microscopy, atomic force microscopy, and UV–Vis spectrophotometer. According to XRD pattern, fullerene (C60) structures were able to deposit in doped samples, for the first time. The fullerene structures were detected at heavily carbon-doped GaN. The obtained band gap changes of heavily carbon-doped GaN samples are determined. The band gap of CGaN on PET substrate decreased to a lower value, about 100 meV. The band gaps were shifted to the lowest wavelengths towards the edge of the UV region by heavily doped carbon. (002) and (004) peaks for GaN were also detected. © 2016 Elsevier Ltden_US
dc.identifier.doi10.1016/j.vacuum.2016.08.013
dc.identifier.endpage42
dc.identifier.issn0042-207X
dc.identifier.scopus2-s2.0-84983732557en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.startpage38
dc.identifier.urihttps://dx.doi.org/10.1016/j.vacuum.2016.08.013
dc.identifier.urihttps://hdl.handle.net/20.500.12403/575
dc.identifier.volume133
dc.identifier.wosWOS:000385327000007en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevier Ltd
dc.relation.ispartofVacuumen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectC60-doped GaN
dc.subjectDoped GaN
dc.subjectOptical properties
dc.subjectSurface properties
dc.subjectAtomic force microscopy
dc.subjectCarbon films
dc.subjectEnergy gap
dc.subjectField emission microscopes
dc.subjectFullerenes
dc.subjectGallium nitride
dc.subjectNanocrystals
dc.subjectScanning electron microscopy
dc.subjectSubstrates
dc.subjectSurface properties
dc.subjectVacuum applications
dc.subjectVacuum technology
dc.subjectX ray diffraction
dc.subjectDoped GaN
dc.subjectField emission scanning electron microscopy
dc.subjectFullerene structure
dc.subjectHeavily doped
dc.subjectNano-crystalline films
dc.subjectPET substrate
dc.subjectThermionic vacuum arc methods
dc.subjectXRD patterns
dc.subjectOptical properties
dc.subjectC60-doped GaN
dc.subjectDoped GaN
dc.subjectOptical properties
dc.subjectSurface properties
dc.subjectAtomic force microscopy
dc.subjectCarbon films
dc.subjectEnergy gap
dc.subjectField emission microscopes
dc.subjectFullerenes
dc.subjectGallium nitride
dc.subjectNanocrystals
dc.subjectScanning electron microscopy
dc.subjectSubstrates
dc.subjectSurface properties
dc.subjectVacuum applications
dc.subjectVacuum technology
dc.subjectX ray diffraction
dc.subjectDoped GaN
dc.subjectField emission scanning electron microscopy
dc.subjectFullerene structure
dc.subjectHeavily doped
dc.subjectNano-crystalline films
dc.subjectPET substrate
dc.subjectThermionic vacuum arc methods
dc.subjectXRD patterns
dc.subjectOptical properties
dc.titleComparisons of surface and optical properties of the heavily carbon-doped GaN nanocrystalline films deposited by thermionic vacuum arc methoden_US
dc.typeArticleen_US

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