Influence of oxygen partial pressure on the metastable copper oxide thin films

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dc.authorid56659484600
dc.authorid7003415405
dc.authorid55897767500
dc.authorid55897416100
dc.authorid9274843500
dc.contributor.authorGeçici B.
dc.contributor.authorKorkmaz S.
dc.contributor.authorÖzen S.
dc.contributor.authorŠenay V.
dc.contributor.authorPat S.
dc.date.accessioned20.04.201910:49:12
dc.date.accessioned2019-04-20T21:43:28Z
dc.date.available20.04.201910:49:12
dc.date.available2019-04-20T21:43:28Z
dc.date.issued2016
dc.departmentBayburt Üniversitesien_US
dc.description.abstractParamelaconite (Cu4O3) is a metastable copper oxide. Metastable copper oxide thin films were deposited on glass substrates by reactive RF magnetron sputtering in argon (Ar) and oxygen (O2) gas mixture atmospheres. Ar/O2 gas ratios in the sputtering ambient were chosen as 1/1 and 1/9. The surface and optical properties were determined by X-ray diffractometer (XRD), atomic force microscope (AFM) and UV-Vis spectrophotometer. The XRD patterns of the samples exhibited single strong diffraction peaks at 35.39° and 35.49° , corresponding to the (202) peak of Cu4O3. The mean thickness values were measured as 100 nm and 80 nm for the films deposited at 1/1 and 1/9 Ar/O2 gas ratios, respectively. The samples showed low transmittance and high absorbance in the high frequency region. © 2016 World Scientific Publishing Company.en_US
dc.identifier.doi10.1142/S0217984915300124
dc.identifier.issn0217-9849
dc.identifier.issue35
dc.identifier.scopus2-s2.0-85019403154en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.urihttps://dx.doi.org/10.1142/S0217984915300124
dc.identifier.urihttps://hdl.handle.net/20.500.12403/569
dc.identifier.volume30
dc.identifier.wosWOS:000391560000001en_US
dc.identifier.wosqualityQ4en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherWorld Scientific Publishing Co. Pte Ltd
dc.relation.ispartofModern Physics Letters Ben_US
dc.relation.publicationcategoryDiğeren_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectAFM
dc.subjectMetastable copper oxide thin film
dc.subjectreactive RF sputter
dc.subjectXRD
dc.subjectAFM
dc.subjectMetastable copper oxide thin film
dc.subjectreactive RF sputter
dc.subjectXRD
dc.titleInfluence of oxygen partial pressure on the metastable copper oxide thin filmsen_US
dc.typeReview Articleen_US

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