Electrical properties of Al/CZTSe nanocrystal Schottky diode
Küçük Resim Yok
Tarih
2024
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Springer
Erişim Hakkı
info:eu-repo/semantics/openAccess
Özet
In this study, electrical changes in diode parameters of Schottky diodes that made of a kesterite semiconductor were examined under different temperatures. For this aim, Cu2ZnSnSe4 (CZTSe) nanocrystals were fabricated using the hot injection technique, and it was covered by spin coating on an ITO glass substrate. We was introduced the physical and structural analyses using scanning electron microscopy and X-ray spectroscopy. Current-voltage measurements were fulfilled at different temperature (from 100 to 325 K) under dark environment. It was observed that its electrical parameters were strongly affected by temperature.
Açıklama
Anahtar Kelimeler
Capacitance-Voltage Characteristics, Current Conduction Mechanism, Cu2znsns4 Thin-Films, I-V-T, Solar-Cells, Temperature-Dependence, Current Transport, Barrier Diodes, Characteristic Parameters, Optical-Properties
Kaynak
Journal of Materials Science-Materials in Electronics
WoS Q Değeri
N/A
Scopus Q Değeri
Q2
Cilt
35
Sayı
11
