Electrical properties of Al/CZTSe nanocrystal Schottky diode

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dc.authoridOZEL, Sultan Suleyman/0000-0002-3935-9649
dc.contributor.authorKisnisci, Z.
dc.contributor.authorOzel, F.
dc.contributor.authorKaradeniz, S.
dc.contributor.authorTugluoglu, N.
dc.contributor.authorOzel, S. S.
dc.contributor.authorYuksel, O. F.
dc.date.accessioned2024-10-04T18:49:42Z
dc.date.available2024-10-04T18:49:42Z
dc.date.issued2024
dc.departmentBayburt Üniversitesien_US
dc.description.abstractIn this study, electrical changes in diode parameters of Schottky diodes that made of a kesterite semiconductor were examined under different temperatures. For this aim, Cu2ZnSnSe4 (CZTSe) nanocrystals were fabricated using the hot injection technique, and it was covered by spin coating on an ITO glass substrate. We was introduced the physical and structural analyses using scanning electron microscopy and X-ray spectroscopy. Current-voltage measurements were fulfilled at different temperature (from 100 to 325 K) under dark environment. It was observed that its electrical parameters were strongly affected by temperature.en_US
dc.description.sponsorshipSelcuk Universityen_US
dc.description.sponsorshipNo Statement Availableen_US
dc.identifier.doi10.1007/s10854-024-12522-7
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue11en_US
dc.identifier.scopus2-s2.0-85190386837en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.urihttps://doi.org/10.1007/s10854-024-12522-7
dc.identifier.urihttp://hdl.handle.net/20.500.12403/3259
dc.identifier.volume35en_US
dc.identifier.wosWOS:001205034100001en_US
dc.identifier.wosqualityN/Aen_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal of Materials Science-Materials in Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectCapacitance-Voltage Characteristicsen_US
dc.subjectCurrent Conduction Mechanismen_US
dc.subjectCu2znsns4 Thin-Filmsen_US
dc.subjectI-V-Ten_US
dc.subjectSolar-Cellsen_US
dc.subjectTemperature-Dependenceen_US
dc.subjectCurrent Transporten_US
dc.subjectBarrier Diodesen_US
dc.subjectCharacteristic Parametersen_US
dc.subjectOptical-Propertiesen_US
dc.titleElectrical properties of Al/CZTSe nanocrystal Schottky diodeen_US
dc.typeArticleen_US

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