The substrate effect on Ge doped GaN thin films coated by thermionic vacuum arc

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dc.authorid55897767500
dc.authorid7003415405
dc.authorid55897416100
dc.authorid9274843500
dc.contributor.authorÖzen S.
dc.contributor.authorKorkmaz Ş.
dc.contributor.authorŞenay V.
dc.contributor.authorPat S.
dc.date.accessioned20.04.201910:49:12
dc.date.accessioned2019-04-20T21:43:23Z
dc.date.available20.04.201910:49:12
dc.date.available2019-04-20T21:43:23Z
dc.date.issued2017
dc.departmentBayburt Üniversitesien_US
dc.description.abstractThis study focuses on characterization and understanding of the substrate effect on Ge doped GaN thin films coated onto transparent substrates. The produced films were deposited onto unheated glass and unheated polyethylene terephthalate by using thermionic vacuum arc technique. Gallium nitride and germanium pellets were used in the thin film production. Reflectance, refractive index and thicknesses of Ge doped GaN thin films were measured by optical interferometer using Cauchy model for fitting. The transmittances were determined in the wavelength range between 200 and 1000 nm by using UV–Vis double beam spectrophotometer. The optical Tauc method was used to determine the band gap energies of produced thin films. Surface morphologies of produced thin films were characterized by atomic force microscopy and also field emission scanning electron microscopy. In conclusion, the substrate effect on the optical and morphological properties of the produced thin films was observed. © 2016, Springer Science+Business Media New York.en_US
dc.identifier.doi10.1007/s10854-016-5657-0
dc.identifier.endpage1293
dc.identifier.issn0957-4522
dc.identifier.issue2
dc.identifier.scopus2-s2.0-84984893148en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage1288
dc.identifier.urihttps://dx.doi.org/10.1007/s10854-016-5657-0
dc.identifier.urihttps://hdl.handle.net/20.500.12403/532
dc.identifier.volume28
dc.identifier.wosWOS:000394232600018en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSpringer New York LLC
dc.relation.ispartofJournal of Materials Science: Materials in Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectAtomic force microscopy
dc.subjectEnergy gap
dc.subjectField emission microscopes
dc.subjectGallium nitride
dc.subjectGermanium
dc.subjectOptical films
dc.subjectPlastic bottles
dc.subjectRefractive index
dc.subjectScanning electron microscopy
dc.subjectSubstrates
dc.subjectVacuum applications
dc.subjectVacuum technology
dc.subjectField emission scanning electron microscopy
dc.subjectFilm production
dc.subjectMorphological properties
dc.subjectOptical interferometer
dc.subjectSubstrate effects
dc.subjectThermionic vacuum arc
dc.subjectTransparent substrate
dc.subjectWavelength ranges
dc.subjectThin films
dc.subjectAtomic force microscopy
dc.subjectEnergy gap
dc.subjectField emission microscopes
dc.subjectGallium nitride
dc.subjectGermanium
dc.subjectOptical films
dc.subjectPlastic bottles
dc.subjectRefractive index
dc.subjectScanning electron microscopy
dc.subjectSubstrates
dc.subjectVacuum applications
dc.subjectVacuum technology
dc.subjectField emission scanning electron microscopy
dc.subjectFilm production
dc.subjectMorphological properties
dc.subjectOptical interferometer
dc.subjectSubstrate effects
dc.subjectThermionic vacuum arc
dc.subjectTransparent substrate
dc.subjectWavelength ranges
dc.subjectThin films
dc.titleThe substrate effect on Ge doped GaN thin films coated by thermionic vacuum arcen_US
dc.typeArticleen_US

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