Optical and surface properties of the in doped GaAs layer deposition using thermionic vacuum arc method
Küçük Resim Yok
Tarih
2016
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
John Wiley and Sons Inc.
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
A broadband optical transparent InGaAs semiconductor layer production of micron thicknesses was produced in only 75 s by thermionic vacuum arc (TVA) method at the first time. The optical and surface properties of the produced layers have been investigated. InGaAs structure is using in electronics and optoelectronics devices. The main advantage of TVA method is its fast deposition rate, without any loss in the quality of the films. Doping is a very simple and fast according to common production methods. InGaAs is an alloy of indium arsenide (InAs) and gallium arsenide (GaAs). InAs with (220) crystallographic direction and GaAs with (024)/(022) crystallographic directions were detected using by XRD analysis. GaAs and InAs are in the cubic and zinc blende crystal system, respectively. According to the transmittance spectra, sample has a broadband transparency in the range of 1000–3300 nm. According to results, defined TVA method for In doping to GaAs is proper fast and friendly method. SCANNING 38:297–302, 2016. © 2015 Wiley Periodicals, Inc. © Wiley Periodicals, Inc.
Açıklama
Anahtar Kelimeler
III/V doped semiconductor, InGaAs, optical properties, TVA, Deposition, Deposition rates, Gallium alloys, Indium alloys, Indium arsenide, Narrow band gap semiconductors, Optical properties, Semiconducting gallium, Semiconducting indium, Semiconductor doping, Surface properties, Vacuum applications, Vacuum technology, Zinc sulfide, Crystallographic directions, Doped semiconductors, InGaAs, Optical transparent, Optoelectronics devices, Semiconductor layers, Thermionic vacuum arc methods, Transmittance spectra, Gallium arsenide, arsenic, ethylene glycol, formamide, gallium, gallium arsenide, indium, indium arsenide, inorganic compound, methyl iodide, unclassified drug, water, analytic method, Article, contact angle, optics, physical chemistry, priority journal, semiconductor, surface property, surface tension, thermionic vacuum arc method, thickness, III/V doped semiconductor, InGaAs, optical properties, TVA, Deposition, Deposition rates, Gallium alloys, Indium alloys, Indium arsenide, Narrow band gap semiconductors, Optical properties, Semiconducting gallium, Semiconducting indium, Semiconductor doping, Surface properties, Vacuum applications, Vacuum technology, Zinc sulfide, Crystallographic directions, Doped semiconductors, InGaAs, Optical transparent, Optoelectronics devices, Semiconductor layers, Thermionic vacuum arc methods, Transmittance spectra, Gallium arsenide, arsenic, ethylene glycol, formamide, gallium, gallium arsenide, indium, indium arsenide, inorganic compound, methyl iodide, unclassified drug, water, analytic method, Article, contact angle, optics, physical chemistry, priority journal, semiconductor, surface property, surface tension, thermionic vacuum arc method, thickness
Kaynak
Scanning
WoS Q Değeri
Q3
Scopus Q Değeri
Q3
Cilt
38
Sayı
4
