Optical and surface properties of the in doped GaAs layer deposition using thermionic vacuum arc method

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dc.authorid9274843500
dc.authorid55897767500
dc.authorid55897416100
dc.authorid7003415405
dc.authorid56841469900
dc.contributor.authorPat S.
dc.contributor.authorÖzen S.
dc.contributor.authorŞenay V.
dc.contributor.authorKorkmaz Ş.
dc.contributor.authorŞimşek V.
dc.date.accessioned20.04.201910:49:12
dc.date.accessioned2019-04-20T21:43:35Z
dc.date.available20.04.201910:49:12
dc.date.available2019-04-20T21:43:35Z
dc.date.issued2016
dc.departmentBayburt Üniversitesien_US
dc.description.abstractA broadband optical transparent InGaAs semiconductor layer production of micron thicknesses was produced in only 75 s by thermionic vacuum arc (TVA) method at the first time. The optical and surface properties of the produced layers have been investigated. InGaAs structure is using in electronics and optoelectronics devices. The main advantage of TVA method is its fast deposition rate, without any loss in the quality of the films. Doping is a very simple and fast according to common production methods. InGaAs is an alloy of indium arsenide (InAs) and gallium arsenide (GaAs). InAs with (220) crystallographic direction and GaAs with (024)/(022) crystallographic directions were detected using by XRD analysis. GaAs and InAs are in the cubic and zinc blende crystal system, respectively. According to the transmittance spectra, sample has a broadband transparency in the range of 1000–3300 nm. According to results, defined TVA method for In doping to GaAs is proper fast and friendly method. SCANNING 38:297–302, 2016. © 2015 Wiley Periodicals, Inc. © Wiley Periodicals, Inc.en_US
dc.identifier.doi10.1002/sca.21269
dc.identifier.endpage302
dc.identifier.issn0161-0457
dc.identifier.issue4
dc.identifier.pmid26361240en_US
dc.identifier.scopus2-s2.0-84985995780en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.startpage297
dc.identifier.urihttps://dx.doi.org/10.1002/sca.21269
dc.identifier.urihttps://hdl.handle.net/20.500.12403/610
dc.identifier.volume38
dc.identifier.wosWOS:000382572500002en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.indekslendigikaynakPubMeden_US
dc.language.isoenen_US
dc.publisherJohn Wiley and Sons Inc.
dc.relation.ispartofScanningen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectIII/V doped semiconductor
dc.subjectInGaAs
dc.subjectoptical properties
dc.subjectTVA
dc.subjectDeposition
dc.subjectDeposition rates
dc.subjectGallium alloys
dc.subjectIndium alloys
dc.subjectIndium arsenide
dc.subjectNarrow band gap semiconductors
dc.subjectOptical properties
dc.subjectSemiconducting gallium
dc.subjectSemiconducting indium
dc.subjectSemiconductor doping
dc.subjectSurface properties
dc.subjectVacuum applications
dc.subjectVacuum technology
dc.subjectZinc sulfide
dc.subjectCrystallographic directions
dc.subjectDoped semiconductors
dc.subjectInGaAs
dc.subjectOptical transparent
dc.subjectOptoelectronics devices
dc.subjectSemiconductor layers
dc.subjectThermionic vacuum arc methods
dc.subjectTransmittance spectra
dc.subjectGallium arsenide
dc.subjectarsenic
dc.subjectethylene glycol
dc.subjectformamide
dc.subjectgallium
dc.subjectgallium arsenide
dc.subjectindium
dc.subjectindium arsenide
dc.subjectinorganic compound
dc.subjectmethyl iodide
dc.subjectunclassified drug
dc.subjectwater
dc.subjectanalytic method
dc.subjectArticle
dc.subjectcontact angle
dc.subjectoptics
dc.subjectphysical chemistry
dc.subjectpriority journal
dc.subjectsemiconductor
dc.subjectsurface property
dc.subjectsurface tension
dc.subjectthermionic vacuum arc method
dc.subjectthickness
dc.subjectIII/V doped semiconductor
dc.subjectInGaAs
dc.subjectoptical properties
dc.subjectTVA
dc.subjectDeposition
dc.subjectDeposition rates
dc.subjectGallium alloys
dc.subjectIndium alloys
dc.subjectIndium arsenide
dc.subjectNarrow band gap semiconductors
dc.subjectOptical properties
dc.subjectSemiconducting gallium
dc.subjectSemiconducting indium
dc.subjectSemiconductor doping
dc.subjectSurface properties
dc.subjectVacuum applications
dc.subjectVacuum technology
dc.subjectZinc sulfide
dc.subjectCrystallographic directions
dc.subjectDoped semiconductors
dc.subjectInGaAs
dc.subjectOptical transparent
dc.subjectOptoelectronics devices
dc.subjectSemiconductor layers
dc.subjectThermionic vacuum arc methods
dc.subjectTransmittance spectra
dc.subjectGallium arsenide
dc.subjectarsenic
dc.subjectethylene glycol
dc.subjectformamide
dc.subjectgallium
dc.subjectgallium arsenide
dc.subjectindium
dc.subjectindium arsenide
dc.subjectinorganic compound
dc.subjectmethyl iodide
dc.subjectunclassified drug
dc.subjectwater
dc.subjectanalytic method
dc.subjectArticle
dc.subjectcontact angle
dc.subjectoptics
dc.subjectphysical chemistry
dc.subjectpriority journal
dc.subjectsemiconductor
dc.subjectsurface property
dc.subjectsurface tension
dc.subjectthermionic vacuum arc method
dc.subjectthickness
dc.titleOptical and surface properties of the in doped GaAs layer deposition using thermionic vacuum arc methoden_US
dc.typeArticleen_US

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