Optical and Surface Characteristics of Mg-Doped GaAs Nanocrystalline Thin Film Deposited by Thermionic Vacuum Arc Technique
Küçük Resim Yok
Tarih
2017
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Springer New York LLC
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Magnesium (Mg) is the most promising p-type dopant for gallium arsenide (GaAs) semiconductor technology. Mg-doped GaAs nanocrystalline thin film has been deposited at room temperature by the thermionic vacuum arc technique, a rapid deposition method for production of doped GaAs material. The microstructure and surface and optical properties of the deposited sample were investigated by x-ray diffraction analysis, scanning electron microscopy, energy-dispersive x-ray spectroscopy, atomic force microscopy, ultraviolet–visible spectrophotometry, and interferometry. The crystalline direction of the deposited sample was determined to be (220) plane and (331) plane at 44.53° and 72.30°, respectively. The Mg-doped GaAs nanocrystalline sample showed high transmittance. © 2016, The Minerals, Metals & Materials Society.
Açıklama
Anahtar Kelimeler
Mg-doped GaAs, Optical properties, surface properties, Atomic force microscopy, Deposition, Doping (additives), Energy dispersive spectroscopy, Gallium arsenide, Nanocrystalline materials, Nanocrystals, Optical properties, Scanning electron microscopy, Semiconducting gallium, Semiconductor device manufacture, Surface properties, Thin films, Vacuum applications, Vacuum technology, X ray diffraction analysis, X ray spectroscopy, Crystalline directions, Energy dispersive X ray spectroscopy, GaAs, Nanocrystalline sample, Nanocrystalline thin films, Semiconductor technology, Surface characteristics, Visible spectrophotometries, III-V semiconductors, Mg-doped GaAs, Optical properties, surface properties, Atomic force microscopy, Deposition, Doping (additives), Energy dispersive spectroscopy, Gallium arsenide, Nanocrystalline materials, Nanocrystals, Optical properties, Scanning electron microscopy, Semiconducting gallium, Semiconductor device manufacture, Surface properties, Thin films, Vacuum applications, Vacuum technology, X ray diffraction analysis, X ray spectroscopy, Crystalline directions, Energy dispersive X ray spectroscopy, GaAs, Nanocrystalline sample, Nanocrystalline thin films, Semiconductor technology, Surface characteristics, Visible spectrophotometries, III-V semiconductors
Kaynak
Journal of Electronic Materials
WoS Q Değeri
Q3
Scopus Q Değeri
Q3
Cilt
46
Sayı
1
