Optical and Surface Characteristics of Mg-Doped GaAs Nanocrystalline Thin Film Deposited by Thermionic Vacuum Arc Technique

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dc.authorid9274843500
dc.authorid55897767500
dc.authorid55897416100
dc.authorid7003415405
dc.contributor.authorPat S.
dc.contributor.authorÖzen S.
dc.contributor.authorŞenay V.
dc.contributor.authorKorkmaz Ş.
dc.date.accessioned20.04.201910:49:12
dc.date.accessioned2019-04-20T21:43:23Z
dc.date.available20.04.201910:49:12
dc.date.available2019-04-20T21:43:23Z
dc.date.issued2017
dc.departmentBayburt Üniversitesien_US
dc.description.abstractMagnesium (Mg) is the most promising p-type dopant for gallium arsenide (GaAs) semiconductor technology. Mg-doped GaAs nanocrystalline thin film has been deposited at room temperature by the thermionic vacuum arc technique, a rapid deposition method for production of doped GaAs material. The microstructure and surface and optical properties of the deposited sample were investigated by x-ray diffraction analysis, scanning electron microscopy, energy-dispersive x-ray spectroscopy, atomic force microscopy, ultraviolet–visible spectrophotometry, and interferometry. The crystalline direction of the deposited sample was determined to be (220) plane and (331) plane at 44.53° and 72.30°, respectively. The Mg-doped GaAs nanocrystalline sample showed high transmittance. © 2016, The Minerals, Metals & Materials Society.en_US
dc.identifier.doi10.1007/s11664-016-4861-2
dc.identifier.issn0361-5235
dc.identifier.issue1
dc.identifier.scopus2-s2.0-84984604092en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.urihttps://dx.doi.org/10.1007/s11664-016-4861-2
dc.identifier.urihttps://hdl.handle.net/20.500.12403/536
dc.identifier.volume46
dc.identifier.wosWOS:000391126900001en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSpringer New York LLC
dc.relation.ispartofJournal of Electronic Materialsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectMg-doped GaAs
dc.subjectOptical properties
dc.subjectsurface properties
dc.subjectAtomic force microscopy
dc.subjectDeposition
dc.subjectDoping (additives)
dc.subjectEnergy dispersive spectroscopy
dc.subjectGallium arsenide
dc.subjectNanocrystalline materials
dc.subjectNanocrystals
dc.subjectOptical properties
dc.subjectScanning electron microscopy
dc.subjectSemiconducting gallium
dc.subjectSemiconductor device manufacture
dc.subjectSurface properties
dc.subjectThin films
dc.subjectVacuum applications
dc.subjectVacuum technology
dc.subjectX ray diffraction analysis
dc.subjectX ray spectroscopy
dc.subjectCrystalline directions
dc.subjectEnergy dispersive X ray spectroscopy
dc.subjectGaAs
dc.subjectNanocrystalline sample
dc.subjectNanocrystalline thin films
dc.subjectSemiconductor technology
dc.subjectSurface characteristics
dc.subjectVisible spectrophotometries
dc.subjectIII-V semiconductors
dc.subjectMg-doped GaAs
dc.subjectOptical properties
dc.subjectsurface properties
dc.subjectAtomic force microscopy
dc.subjectDeposition
dc.subjectDoping (additives)
dc.subjectEnergy dispersive spectroscopy
dc.subjectGallium arsenide
dc.subjectNanocrystalline materials
dc.subjectNanocrystals
dc.subjectOptical properties
dc.subjectScanning electron microscopy
dc.subjectSemiconducting gallium
dc.subjectSemiconductor device manufacture
dc.subjectSurface properties
dc.subjectThin films
dc.subjectVacuum applications
dc.subjectVacuum technology
dc.subjectX ray diffraction analysis
dc.subjectX ray spectroscopy
dc.subjectCrystalline directions
dc.subjectEnergy dispersive X ray spectroscopy
dc.subjectGaAs
dc.subjectNanocrystalline sample
dc.subjectNanocrystalline thin films
dc.subjectSemiconductor technology
dc.subjectSurface characteristics
dc.subjectVisible spectrophotometries
dc.subjectIII-V semiconductors
dc.titleOptical and Surface Characteristics of Mg-Doped GaAs Nanocrystalline Thin Film Deposited by Thermionic Vacuum Arc Techniqueen_US
dc.typeArticleen_US

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