Some physical properties of a Si-doped nano-crystalline GaAs thin film grown by thermionic vacuum arc
Küçük Resim Yok
Tarih
2015
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier Ltd
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Abstract A 160 nm thick Si-doped nano-crystalline GaAs film was grown on a glass substrate by means of the thermionic vacuum arc in just 50 s. Tools and techniques such as an optical reflectometer, Uv-Vis-NIR spectrophotometer, XRD, FESEM, AFM, Hall effect measurement, and diiodomethane, ethylene glycol, formamide, and water contact angle measurements were employed to investigate some of the physical properties of the produced film. XRD characterization indicated that the film contained GaAs (hexagonal system in atomic ratio of 1) and SiAs (monoclinic system in atomic ratio of 1) phases. The grain size obtained from Scherrer's Formula was in the range of 30-40 nm. The AFM micrographs showed the film topography, revealing a surface root mean square roughness of 14.5 nm and average height of 48.3 nm. From the wetting experiments, it was found that the contact angle value is strongly dependent on the liquid used. © 2015 Elsevier Ltd.
Açıklama
Anahtar Kelimeler
AFM, FESEM, GaAs:Si, Surface free energy, Thermionic vacuum arc, Contact angle, Crystalline materials, Ethylene, Ethylene glycol, Free energy, Gallium arsenide, Physical properties, Reflectometers, Semiconducting gallium, Silicon, Substrates, Surface topography, Vacuum applications, Vacuum technology, AFM, FESEM, GaAs, Surface free energy, Thermionic vacuum arc, Topography, AFM, FESEM, GaAs:Si, Surface free energy, Thermionic vacuum arc, Contact angle, Crystalline materials, Ethylene, Ethylene glycol, Free energy, Gallium arsenide, Physical properties, Reflectometers, Semiconducting gallium, Silicon, Substrates, Surface topography, Vacuum applications, Vacuum technology, AFM, FESEM, GaAs, Surface free energy, Thermionic vacuum arc, Topography
Kaynak
Vacuum
WoS Q Değeri
Q3
Scopus Q Değeri
Q1
Cilt
119
