Some physical properties of a Si-doped nano-crystalline GaAs thin film grown by thermionic vacuum arc

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dc.authorid55897416100
dc.authorid55897767500
dc.authorid9274843500
dc.authorid7003415405
dc.contributor.authorŞenay V.
dc.contributor.authorÖzen S.
dc.contributor.authorPat S.
dc.contributor.authorKorkmaz Ş.
dc.date.accessioned20.04.201910:49:12
dc.date.accessioned2019-04-20T21:43:49Z
dc.date.available20.04.201910:49:12
dc.date.available2019-04-20T21:43:49Z
dc.date.issued2015
dc.departmentBayburt Üniversitesien_US
dc.description.abstractAbstract A 160 nm thick Si-doped nano-crystalline GaAs film was grown on a glass substrate by means of the thermionic vacuum arc in just 50 s. Tools and techniques such as an optical reflectometer, Uv-Vis-NIR spectrophotometer, XRD, FESEM, AFM, Hall effect measurement, and diiodomethane, ethylene glycol, formamide, and water contact angle measurements were employed to investigate some of the physical properties of the produced film. XRD characterization indicated that the film contained GaAs (hexagonal system in atomic ratio of 1) and SiAs (monoclinic system in atomic ratio of 1) phases. The grain size obtained from Scherrer's Formula was in the range of 30-40 nm. The AFM micrographs showed the film topography, revealing a surface root mean square roughness of 14.5 nm and average height of 48.3 nm. From the wetting experiments, it was found that the contact angle value is strongly dependent on the liquid used. © 2015 Elsevier Ltd.en_US
dc.identifier.doi10.1016/j.vacuum.2015.05.030
dc.identifier.endpage232
dc.identifier.issn0042-207X
dc.identifier.scopus2-s2.0-84930935946en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.startpage228
dc.identifier.urihttps://dx.doi.org/10.1016/j.vacuum.2015.05.030
dc.identifier.urihttps://hdl.handle.net/20.500.12403/691
dc.identifier.volume119
dc.identifier.wosWOS:000359168900037en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevier Ltd
dc.relation.ispartofVacuumen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectAFM
dc.subjectFESEM
dc.subjectGaAs:Si
dc.subjectSurface free energy
dc.subjectThermionic vacuum arc
dc.subjectContact angle
dc.subjectCrystalline materials
dc.subjectEthylene
dc.subjectEthylene glycol
dc.subjectFree energy
dc.subjectGallium arsenide
dc.subjectPhysical properties
dc.subjectReflectometers
dc.subjectSemiconducting gallium
dc.subjectSilicon
dc.subjectSubstrates
dc.subjectSurface topography
dc.subjectVacuum applications
dc.subjectVacuum technology
dc.subjectAFM
dc.subjectFESEM
dc.subjectGaAs
dc.subjectSurface free energy
dc.subjectThermionic vacuum arc
dc.subjectTopography
dc.subjectAFM
dc.subjectFESEM
dc.subjectGaAs:Si
dc.subjectSurface free energy
dc.subjectThermionic vacuum arc
dc.subjectContact angle
dc.subjectCrystalline materials
dc.subjectEthylene
dc.subjectEthylene glycol
dc.subjectFree energy
dc.subjectGallium arsenide
dc.subjectPhysical properties
dc.subjectReflectometers
dc.subjectSemiconducting gallium
dc.subjectSilicon
dc.subjectSubstrates
dc.subjectSurface topography
dc.subjectVacuum applications
dc.subjectVacuum technology
dc.subjectAFM
dc.subjectFESEM
dc.subjectGaAs
dc.subjectSurface free energy
dc.subjectThermionic vacuum arc
dc.subjectTopography
dc.titleSome physical properties of a Si-doped nano-crystalline GaAs thin film grown by thermionic vacuum arcen_US
dc.typeArticleen_US

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