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Toplam kayıt 8, listelenen: 1-8
Optical and Surface Characteristics of Mg-Doped GaAs Nanocrystalline Thin Film Deposited by Thermionic Vacuum Arc Technique
(Springer New York LLC, 2017)
Magnesium (Mg) is the most promising p-type dopant for gallium arsenide (GaAs) semiconductor technology. Mg-doped GaAs nanocrystalline thin film has been deposited at room temperature by the thermionic vacuum arc technique, ...
A study on some physical properties of a Pb-doped GaAs thin film produced by thermionic vacuum arc
(Elsevier Ltd, 2017)
A 155 nm Pb-doped GaAs thin film was deposited on a glass substrate by means of the thermionic vacuum arc technique in 30 s using GaAs and Pb pellets as source materials. Tools and techniques such as an optical reflectometer, ...
Optical and surface properties of the in doped GaAs layer deposition using thermionic vacuum arc method
(John Wiley and Sons Inc., 2016)
A broadband optical transparent InGaAs semiconductor layer production of micron thicknesses was produced in only 75 s by thermionic vacuum arc (TVA) method at the first time. The optical and surface properties of the ...
Optical, structural, morphological and compositional characterization of a Co-doped GaAs semiconducting thin film produced by thermionic vacuum arc
(Elsevier Ltd, 2016)
A 80 nm 2 at% Co-doped GaAs thin film was deposited on a glass substrate under a high vacuum condition by means of the thermionic vacuum arc technique using GaAs and Co pellets as source materials. Tools and techniques ...
Heavily carbon doped GaAs nanocrystalline thin film deposited by thermionic vacuum arc method
(Elsevier Ltd, 2016)
In this paper, we introduced a new different thin film deposition method for heavily carbon doped GaAs. Used method is thermionic vacuum arc (TVA) and first used for the carbon doping process. The method is very fast ...
Characterization of a fast grown GaAs:Sn thin film by thermionic vacuum arc
(Springer New York LLC, 2015)
In this research, a tin doped gallium arsenide thin film was grown on a glass substrate by means of the TVA technique in a very short period of time (70 s) and it’s morphological, compositional, and optical properties were ...
Some physical properties of a Si-doped nano-crystalline GaAs thin film grown by thermionic vacuum arc
(Elsevier Ltd, 2015)
Abstract A 160 nm thick Si-doped nano-crystalline GaAs film was grown on a glass substrate by means of the thermionic vacuum arc in just 50 s. Tools and techniques such as an optical reflectometer, Uv-Vis-NIR spectrophotometer, ...
Direct and fast growth of GaAs thin films on glass and polyethylene terephthalate substrates using a thermionic vacuum arc
(Springer New York LLC, 2015)
Using a thermionic vacuum arc, single?crystal gallium arsenide (GaAs) layers of micron thickness were grown on PET and glass substrates in 2 min. We present a new deposition mechanism and parameters for GaAs thin films ...